Electromigration in metals : (Record no. 39820)

000 -LEADER
fixed length control field 02278cam a22002298i 4500
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
ISBN 9781139505819
082 00 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 621.3815
100 1# - MAIN ENTRY--AUTHOR NAME
Personal name Ho, P. S.,
Relator term author.
245 10 - TITLE STATEMENT
Title Electromigration in metals :
Sub Title fundamentals to nano-interconnects /
Statement of responsibility, etc Paul Ho, Chao-Kun Hu, Martin Gall, Valeriy Sukharev.
260 ## - PUBLICATION, DISTRIBUTION, ETC. (IMPRINT)
Place of publication London
Name of publisher Cambridge University Press
Year of publication 2022
300 ## - PHYSICAL DESCRIPTION
Number of Pages online resource
504 ## - BIBLIOGRAPHY, ETC. NOTE
Bibliography, etc Includes bibliographical references and index.
505 0# - FORMATTED CONTENTS NOTE
Formatted contents note Introduction to electromigration -- Fundamentals of electromigration -- Thermal stress characteristics and stress induced void formation in aluminium and copper interconnects -- Stress evolution and damage formation in confined metal lines under electric stressing -- Electromigration in Cu interconnect structures -- Scaling effects on microstructure and resistivity of Cu and Co nanointerconnects analysis of electromigration induced stress evolution and voiding in Cu damascene lines with microstructure -- Massive scale statistical studies for electromigration -- Assessment of electromigration damage in large on-chip power grids.
520 ## - SUMMARY, ETC.
Summary, etc "Learn to assess electromigration reliability and design more resilient chips in this comprehensive and practical resource. Beginning with fundamental physics and building to advanced methodologies, this book enables the reader to develop highly reliable on-chip wiring stacks and power grids. Through a detailed review on the role of microstructure, interfaces and processing on electromigration reliability, as well as characterisation, testing and analysis, the book follows the development of on-chip interconnects from microscale to nanoscale. Practical modeling methodologies for statistical analysis, from simple 1D approximation to complex 3D description, can be used for step-by-step development of reliable on-chip wiring stacks and industrial-grade power/ground grids. This is an ideal resource for materials scientists and reliability and chip design engineers"--
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical Term Interconnects (Integrated circuit technology)
General subdivision Materials.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical Term Metals
General subdivision Electric properties.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical Term Electrodiffusion.
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Hu, Chao-Kun,
Relator term author.
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Gall, Martin,
Relator term author.
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Sukharev, Valeriy,
Relator term author.
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Source of classification or shelving scheme
Koha item type Books
Holdings
Withdrawn status Lost status Damaged status Not for loan Permanent Location Current Location Date acquired Source of acquisition Bill Date Full call number Accession Number Price effective from Koha item type
        NASSDOC Library NASSDOC Library 2025-10-07 Cambridge University Press 2025-03-19 621.3815 E-66 2025-10-07 Books